Tuesday, August 12, 2014

Nanotech Update




Using silicon oxide, the most studied and the most common element on earth, a team at Rice University is close to licensing a unique new dielectric component for use in creating and storing resistive random access memory (RRAM) on a nano scale.  If successfully commercialized the technique will be used to create a new generation of "zip drives" capable of storing a terabyte of data on a device the size of a postage stamp.  Follow the link to read more.


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James L. Salmon, Esq.
Collaborative Construction
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